Confined ion beam sputtering device and method

Patent · Fri Jan 01 04:00:00 EST 1988

OSTI ID:866602

Sharp, Donald J ^[1]

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1. Albuquerque, NM

A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

• Research Organization: AT & T CORP
• DOE Contract Number: AC04-76DP00789
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4747922
• OSTI ID: 866602
• Country of Publication: United States
• Language: English

Related Subjects

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acute
acute angle
acute angles
alternatively
angles
applied
approaching
beam
beam sputtering
beams
bias
bias applied
confined
core
cylindrical
deposit
deposit material
deposit particles
deposition
device
directed
diverge
divergence
downstream
enhances
flux
flux rate
forced
generate
hollow
hollow cylindrical
impinge
impingement
induces
internally
inward
lined
material
method
negative
negative bias
obtained
particles
polishing
portion
positive
provide
radially
radially inward
rate
reach
received
results
sputter
sputter deposit
sputtered
sputtering
substrate
surface
surrounds
target
target surface
thereon