Confined ion beam sputtering device and method
Patent
·
OSTI ID:6842848
A confined ion beam sputtering device is described comprising: a hollow cylindrical target having at least an inner wall surface of material selected for ion sputtering; a substrate supported within and electrically insulated from the cylindrical target; a first ion beam source means at one end of the cylindrical target for generating a first ion beam and directing the beam axially into the hollow cylindrical target toward the substrate; first biasing means for electrically biasing the substrate; and second biasing means for electrically biasing the cylindrical target independent of the first biasing means; whereby ions entering the cylindrical target may be electrically deflected circumferentially to impinge on the inner wall surface of the target at acute angles for efficiently sputtering material therefrom for deposit on the substrate.
- Assignee:
- Dept. of Energy, Washington, DC
- Patent Number(s):
- US 4747922
- OSTI ID:
- 6842848
- Country of Publication:
- United States
- Language:
- English
Similar Records
Confined ion beam sputtering device and method
Confined ion beam sputtering device and method
Coating The Inner Walls Of Tubes With TiN Films By Reactive Sputtering
Patent
·
Thu Dec 31 23:00:00 EST 1987
·
OSTI ID:866602
Confined ion beam sputtering device and method
Patent
·
Mon Mar 24 23:00:00 EST 1986
·
OSTI ID:6444969
Coating The Inner Walls Of Tubes With TiN Films By Reactive Sputtering
Journal Article
·
Tue Aug 26 00:00:00 EDT 2003
· AIP Conference Proceedings
·
OSTI ID:20634226