Confined ion beam sputtering device and method
Patent
·
OSTI ID:6444969
A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- Dept. of Energy
- Patent Number(s):
- None
- Application Number:
- ON: DE87007221
- OSTI ID:
- 6444969
- Country of Publication:
- United States
- Language:
- English
Similar Records
Confined ion beam sputtering device and method
Confined ion beam sputtering device and method
Confined ion beam cylinder sputtering: A new approach
Patent
·
Thu Dec 31 23:00:00 EST 1987
·
OSTI ID:866602
Confined ion beam sputtering device and method
Patent
·
Tue May 31 00:00:00 EDT 1988
·
OSTI ID:6842848
Confined ion beam cylinder sputtering: A new approach
Journal Article
·
Fri Oct 31 23:00:00 EST 1986
· J. Vac. Sci. Technol., A; (United States)
·
OSTI ID:7241516