Liquid metal ion source and alloy for ion emission of multiple ionic species
Patent
·
OSTI ID:866272
- Saugus, CA
- Oxnard, CA
- Los Alamos, NM
- McMinnville, OR
A liquid metal ion source and alloy for the simultaneous ion evaporation of arsenic and boron, arsenic and phosphorus, or arsenic, boron and phosphorus. The ionic species to be evaporated are contained in palladium-arsenic-boron and palladium-arsenic-boron-phosphorus alloys. The ion source, including an emitter means such as a needle emitter and a source means such as U-shaped heater element, is preferably constructed of rhenium and tungsten, both of which are readily fabricated. The ion sources emit continuous beams of ions having sufficiently high currents of the desired species to be useful in ion implantation of semiconductor wafers for preparing integrated circuit devices. The sources are stable in operation, experience little corrosion during operation, and have long operating lifetimes.
- Assignee:
- Hughes Aircraft Company (Los Angeles, CA)
- Patent Number(s):
- US 4670685
- Application Number:
- 06/851,755
- OSTI ID:
- 866272
- Country of Publication:
- United States
- Language:
- English
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· J. Vac. Sci. Technol., B; (United States)
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·
Tue Dec 31 23:00:00 EST 1985
·
OSTI ID:6708715
Related Subjects
/313/250/
alloy
alloys
arsenic
beams
boron
circuit
circuit device
circuit devices
constructed
contained
continuous
corrosion
currents
desired
devices
element
emission
emit
emitter
evaporated
evaporation
experience
fabricated
heater
heater element
implantation
including
integrated
integrated circuit
ionic
ionic species
lifetimes
liquid
liquid metal
means
metal
multiple
needle
operating
operating life
operating lifetime
operating lifetimes
operation
palladium-arsenic-boron
palladium-arsenic-boron-phosphorus
phosphorus
preferably
preferably constructed
preparing
readily
rhenium
semiconductor
semiconductor wafer
semiconductor wafers
simultaneous
source
source means
sources
species
stable
sufficiently
tungsten
u-shaped
useful
wafers
alloy
alloys
arsenic
beams
boron
circuit
circuit device
circuit devices
constructed
contained
continuous
corrosion
currents
desired
devices
element
emission
emit
emitter
evaporated
evaporation
experience
fabricated
heater
heater element
implantation
including
integrated
integrated circuit
ionic
ionic species
lifetimes
liquid
liquid metal
means
metal
multiple
needle
operating
operating life
operating lifetime
operating lifetimes
operation
palladium-arsenic-boron
palladium-arsenic-boron-phosphorus
phosphorus
preferably
preferably constructed
preparing
readily
rhenium
semiconductor
semiconductor wafer
semiconductor wafers
simultaneous
source
source means
sources
species
stable
sufficiently
tungsten
u-shaped
useful
wafers