Thick crystalline films on foreign substrates

Patent · Wed Jan 01 00:00:00 EST 1986

OSTI ID:865792

Smith, Henry I ^[1]; Atwater, Harry A ^[2]; Geis, Michael W ^[3]

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1. Sudbury, MA
2. Somerville, MA
3. Acton, MA

To achieve a uniform texture, large crystalline grains or, in some cases, a single crystalline orientation in a thick (>1 .mu.m) film on a foreign substrate, the film is formed so as to be thin (<1 .mu.m) in a certain section. Zone-melting recrystallization is initiated in the thin section and then extended into the thick section. The method may employ planar constriction patterns of orientation filter patterns.

• Research Organization: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
• DOE Contract Number: AC02-82ER13019
• Assignee: Massachusetts Institute of Technology (Cambridge, MA)
• Patent Number(s): US 4576676
• OSTI ID: 865792
• Country of Publication: United States
• Language: English

Related Subjects

thick
crystalline
films
foreign
substrates
achieve
uniform
texture
grains
single
orientation
film
substrate
formed
section
zone-melting
recrystallization
initiated
extended
method
employ
planar
constriction
patterns
filter
crystalline films
single crystalline
single crystal
foreign substrates
orientation filter
/438/117/