Thick crystalline films on foreign substrates
Abstract
To achieve a uniform texture, large crystalline grains or, in some cases, a single crystalline orientation in a thick (>1 .mu.m) film on a foreign substrate, the film is formed so as to be thin (<1 .mu.m) in a certain section. Zone-melting recrystallization is initiated in the thin section and then extended into the thick section. The method may employ planar constriction patterns of orientation filter patterns.
- Inventors:
-
- Sudbury, MA
- Somerville, MA
- Acton, MA
- Publication Date:
- Research Org.:
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- OSTI Identifier:
- 865792
- Patent Number(s):
- US 4576676
- Assignee:
- Massachusetts Institute of Technology (Cambridge, MA)
- DOE Contract Number:
- AC02-82ER13019
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- thick; crystalline; films; foreign; substrates; achieve; uniform; texture; grains; single; orientation; film; substrate; formed; section; zone-melting; recrystallization; initiated; extended; method; employ; planar; constriction; patterns; filter; crystalline films; single crystalline; single crystal; foreign substrates; orientation filter; /438/117/
Citation Formats
Smith, Henry I, Atwater, Harry A, and Geis, Michael W. Thick crystalline films on foreign substrates. United States: N. p., 1986.
Web.
Smith, Henry I, Atwater, Harry A, & Geis, Michael W. Thick crystalline films on foreign substrates. United States.
Smith, Henry I, Atwater, Harry A, and Geis, Michael W. 1986.
"Thick crystalline films on foreign substrates". United States. https://www.osti.gov/servlets/purl/865792.
@article{osti_865792,
title = {Thick crystalline films on foreign substrates},
author = {Smith, Henry I and Atwater, Harry A and Geis, Michael W},
abstractNote = {To achieve a uniform texture, large crystalline grains or, in some cases, a single crystalline orientation in a thick (>1 .mu.m) film on a foreign substrate, the film is formed so as to be thin (<1 .mu.m) in a certain section. Zone-melting recrystallization is initiated in the thin section and then extended into the thick section. The method may employ planar constriction patterns of orientation filter patterns.},
doi = {},
url = {https://www.osti.gov/biblio/865792},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1986},
month = {Wed Jan 01 00:00:00 EST 1986}
}
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