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Title: Zone-melting recrystallization for solar cells. Annual progress report, September 1, 1982-August 31, 1983

Technical Report ·
OSTI ID:5848757

Zone-melting recrystallization (ZMR) of Si on SiO/sub 2/ is investigated to determine if this process can be adpated to produce material configurations suitable for low-cost, high-efficiency photovoltaic cells. Fundamental recrystallization mechanisms, crystallographic characteristics and electrical properties are studied. Novel means of controlling crystallographic properties have been developed, including: hourglass, vertical-constriction, entrainment, and orientation-filtering techniques. EBIC studies indicated enhanced dopant diffusion along grain boundaries and subboundaries, and showed that the diffusion length of minority carriers is approx. 100 ..mu..m. DLTS studies showed that ZMR films do not contain deep levels associated with impurities, and have interface-state densities comparable to IC-grade Si wafers. A (100) crystallographic texture can be achieved in 50 ..mu..m-thick ZMR Si films using the vertical-constriction technique. Such films can provide a double pass of incident light and should be suitable for high-efficiency photovoltaic cells. Both two-sided and back-contact cells have been fabricated. We intend to develop a process in which thick Si films are recrystallized directly on the windows of photovoltaic modules. This should lead to considerable economy.

Research Organization:
Massachusetts Inst. of Tech., Cambridge (USA)
DOE Contract Number:
AC02-82ER13019
OSTI ID:
5848757
Report Number(s):
DOE/ER/13019-1; ON: DE83017851
Resource Relation:
Other Information: Portions are illegible in microfiche products
Country of Publication:
United States
Language:
English