High-quality silicon films prepared by zone-melting recrystallization

Technical Report · Sun Apr 01 04:00:00 EST 1984

OSTI ID:6407586

Chen, C K; Geis, M W; Tsaur, B Y; Fan, J C.C.

The graphite strip heater zone melting recrystallization (ZMR) technique is described. The material properties of the ZMR films, and SOI device results are reviewed. Although our ZMR work is primarily motivated by integrated circuit applications, this work evolved in part from earlier research on laser crystallization of thick amorphous GaAs and Si films, which was undertaken with the goal of producing low cost photovoltaic materials. The ZMR growth process and its effect on the properties of the recrystallized films may contribute some insight to a general understanding of the rapid recrystallization of Si for solar cells. Adaptation of ZMR for solar cell fabrication is considered.

• Research Organization: Massachusetts Inst. of Tech., Lexington (USA). Lincoln Lab.
• OSTI ID: 6407586
• Report Number(s): N-84-28638
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CRYSTAL GROWTH
CRYSTALS
DIRECT ENERGY CONVERTERS
EQUIPMENT
FABRICATION
FILMS
GALLIUM ARSENIDE SOLAR CELLS
GRAPHITIZATION
MELTING
PHASE TRANSFORMATIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
POLYCRYSTALS
RECRYSTALLIZATION
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
THIN FILMS
ZONE MELTING