The role of radiation in melt stability in zone-melt recrystallization of SOI

Journal Article · Tue May 01 04:00:00 EDT 1990 · Journal of Materials Research; (USA)

DOI:https://doi.org/10.1557/JMR.1990.0998· OSTI ID:6718967

Knapp, J A ^[1]; Thompson, L R; Collins, G J ^[2]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (USA)
2. Colorado State University, Ft. Collins, Colorado 80523 (USA)

Under circumstances in Zone-Melt-Recrystallization (ZMR) of Si-on-Insulator (SOI) structures where radiative heat loss is significant, the {similar to}50% decrease in emissivity when Si melts destabilizes the Si molten zone. We have demonstrated this both experimentally using a slowly scanned e-beam line source and numerically with a finite-element computational simulation. The resulting instability narrows the process window and tightens requirements on beam control and background heating uniformity, both for e-beam ZMR systems and optically-coupled systems such as a graphite strip heater.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6718967
• Journal Information: Journal of Materials Research; (USA), Journal Name: Journal of Materials Research; (USA) Vol. 5:5; ISSN JMREE; ISSN 0884-2914
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
BEAMS
COMPUTERIZED SIMULATION
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
ELECTROMAGNETIC RADIATION
ELECTRON BEAMS
ELEMENTS
ENERGY LOSSES
EQUIPMENT
FINITE ELEMENT METHOD
HEAT LOSSES
HETEROJUNCTIONS
JUNCTIONS
LEPTON BEAMS
LOSSES
MELTING
NUMERICAL SOLUTION
PARTICLE BEAMS
PHASE TRANSFORMATIONS
RADIATIONS
RECRYSTALLIZATION
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SIMULATION
STABILITY
THERMAL RADIATION
ZONE MELTING