Pattern formation during stationary heating and zone melting recrystallization of a silicon thin film
Journal Article
·
· Metallurgical and Materials Transactions. A, Physical Metallurgy and Materials Science
- Chongju Univ. (Korea, Republic of). Dept. of Physics
- Kunsan National Univ. (Korea, Republic of). Dept. of Materials Science and Engineering
- Univ. of Tokyo (Japan). Dept. of Metallurgy
Solid/liquid (S/L) interface patterns during stationary heating and zone melting recrystallization (ZMR) of a Si thin film were calculated by using a phase-field model. The formation of an irregular S/L interface, solid particles in an undercooled liquid, and liquid droplets in a solid Si during stationary heating of the Si thin film could be interpreted by the difference in reflectivity between the solid and liquid Si, which results in the formation of undercooled liquid in front of the interface. The effects of the heater`s scanning velocity and the radiation width during ZMR on the S/L interface patterns were calculated for a given interfacial energy anisotropy constant. An irregular, zigzag-shaped interface pattern was preferred at a lower scanning velocity and wider radiation zone. A regular, cellular S/L pattern can be obtained at a certain range of processing parameters. The cellular spacing increased by increasing either the heater`s scanning velocity or the radiation width.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 335298
- Journal Information:
- Metallurgical and Materials Transactions. A, Physical Metallurgy and Materials Science, Journal Name: Metallurgical and Materials Transactions. A, Physical Metallurgy and Materials Science Journal Issue: 3 Vol. 40; ISSN 1073-5623; ISSN MMTAEB
- Country of Publication:
- United States
- Language:
- English
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