Thickness dependence of defect density in thin film polycrystalline silicon formed on insulator by zone-melting recrystallization
Book
·
OSTI ID:191033
- Mitsubishi Electric Corp., Itami, Hyogo (Japan). Semiconductor Research Lab.
Formation technique of high quality thin film polycrystalline Si on insulator by zone-melting recrystallization (ZMR) was investigated. Varying the thickness of polycrystalline Si of ZMR samples, thickness dependence of defect density in ZMR-Si films was studied. It was found that defect density of ZMR-Si film was strongly affected by thickness of polycrystalline Si. By thinning the polycrystalline Si film, defect density of ZMR-Si film was reduced to 3 {times} 10{sup 6}/cm{sup 2} without lowering scanning speed at ZMR process.
- OSTI ID:
- 191033
- Report Number(s):
- CONF-941203--; ISBN 0-7803-1459-X
- Country of Publication:
- United States
- Language:
- English
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