Electron-beam-induced current measurements in silicon-on-insulator films prepared by zone-melting recrystallization

Journal Article · Thu Sep 01 04:00:00 EDT 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94359· OSTI ID:5751787

Maby, E W; Atwater, H A; Keigler, A L; Johnson, N M

Enhanced diffusion of arsenic along grain boundaries and subboundaries in zone-recrystallized silicon-on-insulator films has been measured by electron-beam-induced current analysis of lateral pn junctions fabricated in the films. A four-hour diffusion at 1100/sup 0/C resulted in protrusions of arsenic at the junction edges which measured approximately 3--5 ..mu..m along the grain boundaries and only 1--2 ..mu..m along the subboundaries. The results suggest that under more ordinary thermal processing conditions, field-effect transistors with channel lengths greater than about 1.5 ..mu..m can be randomly positioned with respect to the more numerous subboundaries, but grain boundaries should be avoided.

• Research Organization: Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
• DOE Contract Number: AC02-82ER13019
• OSTI ID: 5751787
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 43:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360603* -- Materials-- Properties
ARSENIC
CHALCOGENIDES
CRYSTAL STRUCTURE
CURRENTS
DIFFUSION
ELECTRIC CURRENTS
ELECTRON MICROSCOPY
ELEMENTS
FABRICATION
FIELD EFFECT TRANSISTORS
FILMS
GRAIN BOUNDARIES
HEAT TREATMENTS
JUNCTIONS
MICROSCOPY
MICROSTRUCTURE
OXIDES
OXYGEN COMPOUNDS
P-N JUNCTIONS
RECRYSTALLIZATION
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS
VERY HIGH TEMPERATURE