InP:Fe Photoconducting device

Patent · Sun Jan 01 00:00:00 EST 1984

OSTI ID:865298

Hammond, Robert B ^[1]; Paulter, Nicholas G ^[2]; Wagner, Ronald S ^[1]

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1. Los Alamos, NM
2. Albuquerque, NM

A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.

• Research Organization: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
• DOE Contract Number: W-7405-ENG-36
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4490709
• OSTI ID: 865298
• Country of Publication: United States
• Language: English

Related Subjects

inp
photoconducting
device
fabricated
fe-doped
semi-insulating
crystals
exhibits
exponential
decay
transient
time
inversely
related
concentration
photoconductive
demonstrated
devices
auge
ausn
contacts
response
times
150
1000
picoseconds
achieved
response time
inversely related
response times
device fabricated
decay time
photoconducting device
/338/257/