InP:Fe Photoconducting device

Patent · 31 December 1983

OSTI ID:865298

Hammond, Robert B ^[1]; Paulter, Nicholas G ^[2]; Wagner, Ronald S ^[1]

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1. Los Alamos, NM
2. Albuquerque, NM

A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.

• Research Organization: Los Alamos National Laboratory (LANL), Los Alamos, NM
• DOE Contract Number: W-7405-ENG-36
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4490709
• OSTI ID: 865298
• Country of Publication: United States
• Language: English

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