InP:Fe photoconducting device
Patent
·
OSTI ID:5444069
A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.
- DOE Contract Number:
- W-7405-ENG-36
- Assignee:
- EDB-84-031088
- Application Number:
- ON: DE84005921
- OSTI ID:
- 5444069
- Resource Relation:
- Other Information: Portions are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
47 OTHER INSTRUMENTATION
42 ENGINEERING
INDIUM PHOSPHIDES
IRON ADDITIONS
PHOTOCONDUCTORS
DESIGN
ELECTRIC CONTACTS
GAIN
GERMANIUM ALLOYS
GOLD ALLOYS
TIN ALLOYS
TRANSIENTS
ALLOYS
AMPLIFICATION
ELECTRICAL EQUIPMENT
EQUIPMENT
INDIUM COMPOUNDS
IRON ALLOYS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
440300* - Miscellaneous Instruments- (-1989)
420800 - Engineering- Electronic Circuits & Devices- (-1989)
42 ENGINEERING
INDIUM PHOSPHIDES
IRON ADDITIONS
PHOTOCONDUCTORS
DESIGN
ELECTRIC CONTACTS
GAIN
GERMANIUM ALLOYS
GOLD ALLOYS
TIN ALLOYS
TRANSIENTS
ALLOYS
AMPLIFICATION
ELECTRICAL EQUIPMENT
EQUIPMENT
INDIUM COMPOUNDS
IRON ALLOYS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
440300* - Miscellaneous Instruments- (-1989)
420800 - Engineering- Electronic Circuits & Devices- (-1989)