InP:Fe photoconducting device
Patent
·
OSTI ID:5444069
A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.
- DOE Contract Number:
- W-7405-ENG-36
- Assignee:
- EDB-84-031088
- Patent Number(s):
- None
- Application Number:
- ON: DE84005921
- OSTI ID:
- 5444069
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
440300* -- Miscellaneous Instruments-- (-1989)
47 OTHER INSTRUMENTATION
ALLOYS
AMPLIFICATION
DESIGN
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
EQUIPMENT
GAIN
GERMANIUM ALLOYS
GOLD ALLOYS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
IRON ADDITIONS
IRON ALLOYS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOCONDUCTORS
PNICTIDES
TIN ALLOYS
TRANSIENTS
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
440300* -- Miscellaneous Instruments-- (-1989)
47 OTHER INSTRUMENTATION
ALLOYS
AMPLIFICATION
DESIGN
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
EQUIPMENT
GAIN
GERMANIUM ALLOYS
GOLD ALLOYS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
IRON ADDITIONS
IRON ALLOYS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOCONDUCTORS
PNICTIDES
TIN ALLOYS
TRANSIENTS