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U.S. Department of Energy
Office of Scientific and Technical Information

InP:Fe photoconducting device

Patent ·
OSTI ID:5444069

A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.

DOE Contract Number:
W-7405-ENG-36
Assignee:
EDB-84-031088
Patent Number(s):
None
Application Number:
ON: DE84005921
OSTI ID:
5444069
Country of Publication:
United States
Language:
English