InP:Fe photoconducting device
Patent
·
OSTI ID:5769523
A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.
- Assignee:
- Dept. of Energy
- Patent Number(s):
- US 4490709
- OSTI ID:
- 5769523
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440300* -- Miscellaneous Instruments-- (-1989)
47 OTHER INSTRUMENTATION
ALLOYS
AMPLIFICATION
CRYSTALS
DESIGN
DOPED MATERIALS
GAIN
GERMANIUM COMPOUNDS
GOLD COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
IRON ADDITIONS
IRON ALLOYS
MATERIALS
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOCONDUCTORS
PNICTIDES
TIN COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
47 OTHER INSTRUMENTATION
ALLOYS
AMPLIFICATION
CRYSTALS
DESIGN
DOPED MATERIALS
GAIN
GERMANIUM COMPOUNDS
GOLD COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
IRON ADDITIONS
IRON ALLOYS
MATERIALS
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOCONDUCTORS
PNICTIDES
TIN COMPOUNDS
TRANSITION ELEMENT COMPOUNDS