InP:Fe photoconducting device

Patent · Tue Dec 25 00:00:00 EST 1984

OSTI ID:5769523

Hammond, R B; Paulter, N G; Wagner, R S

A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.

• Assignee: Dept. of Energy
• Patent Number(s): US 4490709
• OSTI ID: 5769523
• Resource Relation: Patent File Date: Filed date 6 Dec 1982; Other Information: PAT-APPL-447349
• Country of Publication: United States
• Language: English

Related Subjects

47 OTHER INSTRUMENTATION
PHOTOCONDUCTORS
DESIGN
CRYSTALS
DOPED MATERIALS
GAIN
GERMANIUM COMPOUNDS
GOLD COMPOUNDS
INDIUM PHOSPHIDES
IRON ADDITIONS
PERFORMANCE
TIN COMPOUNDS
ALLOYS
AMPLIFICATION
INDIUM COMPOUNDS
IRON ALLOYS
MATERIALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
TRANSITION ELEMENT COMPOUNDS
440300* - Miscellaneous Instruments- (-1989)