InP:Fe photoconductors as photodetectors
Journal Article
·
· IEEE Trans. Electron Devices; (United States)
Impulse response measurements of photoconductors fabricated from Fe-doped, semi-insulating InP crystals are described. Results show purely exponential decay transients with decay times which are inversely related to Fe concentrations. Photoconductive gains as high as 5 have been demonstrated in photoconductors with AuGe and AuSn contacts. Response times from 150 to 1000 ps are observed.
- Research Organization:
- Los Alamos National Lab., NM
- OSTI ID:
- 6853184
- Journal Information:
- IEEE Trans. Electron Devices; (United States), Vol. ED-30:4
- Country of Publication:
- United States
- Language:
- English
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