InP:Fe photoconductors as photodetectors

Journal Article · Fri Apr 01 04:00:00 EST 1983 · IEEE Trans. Electron Devices; (United States)

DOI:https://doi.org/10.1109/T-ED.1983.21138· OSTI ID:6853184

Hammond, R B; Paulter, N G; Wagner, R S; Springer, T E; Mac Roberts, M D.J.

Impulse response measurements of photoconductors fabricated from Fe-doped, semi-insulating InP crystals are described. Results show purely exponential decay transients with decay times which are inversely related to Fe concentrations. Photoconductive gains as high as 5 have been demonstrated in photoconductors with AuGe and AuSn contacts. Response times from 150 to 1000 ps are observed.

• Research Organization: Los Alamos National Lab., NM
• OSTI ID: 6853184
• Journal Information: IEEE Trans. Electron Devices; (United States), Journal Name: IEEE Trans. Electron Devices; (United States) Vol. ED-30:4; ISSN IETDA
• Country of Publication: United States
• Language: English

Related Subjects

440300* -- Miscellaneous Instruments-- (-1989)
47 OTHER INSTRUMENTATION
AMPLIFICATION
DOPED MATERIALS
GAIN
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
MATERIALS
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOCONDUCTORS
PHOTODETECTORS
PNICTIDES
PULSES