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Method of deposition of silicon carbide layers on substrates and product

Patent ·
OSTI ID:865089
 [1];  [2];  [1];  [1];  [2]
  1. Oak Ridge, TN
  2. Knoxville, TN
+ Show Author Affiliations

A method for direct chemical vapor deposition of silicon carbide to substrates, especially nuclear waste particles, is provided by the thermal decomposition of methylsilane at about 800.degree. C. to 1050.degree. C. when the substrates have been confined within a suitable coating environment.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN
DOE Contract Number:
W-7405-ENG-26
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Number(s):
US 4459338
OSTI ID:
865089
Country of Publication:
United States
Language:
English

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Related Subjects

/428/427/976/
1050
800
carbide
carbide layers
chemical
chemical vapor
coating
confined
decomposition
degree
deposition
direct
direct chemical
environment
especially
layers
method
methylsilane
nuclear
nuclear waste
particles
product
provided
silicon
silicon carbide
substrates
suitable
thermal
thermal decomposition
vapor
vapor deposition
waste
waste particles