Method of deposition of silicon carbide layers on substrates
Patent
·
OSTI ID:6509192
A method for direct chemical vapor deposition of silicon carbide to substrates, especially nuclear waste particles, is provided by the thermal decomposition of methylsilane at 800 to 1050/sup 0/C when the substrates have been confined within a suitable coating environment.
- DOE Contract Number:
- W-7405-ENG-36
- Assignee:
- EDB-83-048396
- Patent Number(s):
- None
- Application Number:
- ON: DE83006873
- OSTI ID:
- 6509192
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
052001* -- Nuclear Fuels-- Waste Processing
12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE WASTES FROM NUCLEAR FACILITIES
36 MATERIALS SCIENCE
360201 -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
HYDRIDES
HYDROGEN COMPOUNDS
MATERIALS
PARTICLES
RADIOACTIVE MATERIALS
RADIOACTIVE WASTES
SILANES
SILICON CARBIDES
SILICON COMPOUNDS
SURFACE COATING
WASTES
12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE WASTES FROM NUCLEAR FACILITIES
36 MATERIALS SCIENCE
360201 -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
HYDRIDES
HYDROGEN COMPOUNDS
MATERIALS
PARTICLES
RADIOACTIVE MATERIALS
RADIOACTIVE WASTES
SILANES
SILICON CARBIDES
SILICON COMPOUNDS
SURFACE COATING
WASTES