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Title: Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

Patent ·
OSTI ID:869222
 [1]
  1. Powell, TN
+ Show Author Affiliations

A process for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
DOE Contract Number:
AC05-84OR21400
Assignee:
Martin Marietta Energy Systems, Inc. (Oak Ridge, TN)
Patent Number(s):
US 5300322
OSTI ID:
869222
Country of Publication:
United States
Language:
English

References (4)

CVD Fabrication of In-situ Composites of Non-Oxide Ceramics book January 1986
CVD of Si3N4 and Its Composites book
Pyrolytic Si3N4 journal August 1972
Chemical Vapor Deposition of Silicon Nitride journal October 1976

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Related Subjects

molybdenum
enhanced
low-temperature
deposition
crystalline
silicon
nitride
process
chemical
vapor
comprises
steps
introducing
mixture
source
nitrogen
hydrogen
vessel
containing
suitable
substrate
thermally
decomposing
deposit
coating
comprising
dispersion
silicide
temperature deposition
silicon source
thermally decomposing
coating comprising
silicon nitride
chemical vapor
vapor deposition
crystalline silicon
vessel containing
suitable substrate
nitrogen source
molybdenum silicide
low-temperature deposition
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