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Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

Patent ·
OSTI ID:869222

A process for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.

Research Organization:
LOCKHEED MARTIN ENRGY SYST INC
DOE Contract Number:
AC05-84OR21400
Assignee:
Martin Marietta Energy Systems, Inc. (Oak Ridge, TN)
Patent Number(s):
US 5300322
OSTI ID:
869222
Country of Publication:
United States
Language:
English

References (4)

CVD of Si3N4 and Its Composites book
Pyrolytic Si3N4 journal August 1972
Chemical Vapor Deposition of Silicon Nitride journal October 1976
CVD Fabrication of In-situ Composites of Non-Oxide Ceramics book January 1986