The growth of silicon nitride crystalline films using microwave plasma enhanced chemical vapor deposition

Journal Article · Thu Sep 01 04:00:00 EDT 1994 · Journal of Materials Research; (United States)

DOI:https://doi.org/10.1557/JMR.1994.2341· OSTI ID:7040099

Grannen, K J; Xiong, F; Chang, R P.H. ^[1]

---

1. Northwestern University, Department of Materials Science and Engineering, Evanston, Illinois 60208 (United States)

Crystallinity thin films of silicon nitride have been grown on a variety of substrates by microwave plasma-enhanced chemical vapor deposition using N[sub 2], O[sub 2], and CH[sub 4] gases at a temperature of 800 [degree]C. X-ray diffraction and Rutherford backscattering measurements indicate the deposits are stoichiometric silicon nitride with varying amounts of the [alpha] and [beta] phases. Scanning electron microscope imaging indicates [beta]--Si[sub 3]N[sub 4] possesses sixfold symmetry with particles sizes in the submicron range. In one experiment, the silicon necessary for growth comes from the single crystal silicon substrate due to etching/sputtering by the nitrogen plasma. The dependence of the grain size on the methane concentration is investigated. In another experiment, an organo-silicon source, methoxytrimethylsilane, is used to grow silicon nitride with controlled introduction of the silicon necessary for growth. Thin crystalline films are deposited at rates of 0.1 [mu]m/h as determined by profilometry. A growth mechanism for both cases is proposed.

• DOE Contract Number: FG02-87ER45314
• OSTI ID: 7040099
• Journal Information: Journal of Materials Research; (United States), Journal Name: Journal of Materials Research; (United States) Vol. 9:9; ISSN JMREEE; ISSN 0884-2914
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COHERENT SCATTERING
CRYSTALS
DEPOSITION
DIFFRACTION
ELASTIC SCATTERING
ELECTROMAGNETIC RADIATION
FILMS
GROWTH
MICROSTRUCTURE
MICROWAVE RADIATION
NITRIDES
NITROGEN COMPOUNDS
PLASMA
PNICTIDES
POLYCRYSTALS
RADIATIONS
RUTHERFORD SCATTERING
SCATTERING
SILICON COMPOUNDS
SILICON NITRIDES
SURFACE COATING
TEMPERATURE RANGE
TEMPERATURE RANGE 1000-4000 K
THIN FILMS
X-RAY DIFFRACTION