Synthesis of crystalline carbon nitride by chemical vapor deposition

Book · Tue Dec 31 04:00:00 EST 1996

OSTI ID:470924

Zhang, Y; Li, H ^[1]; Xue, Q ^[2]

---

1. Lanzhou Univ. (China)
2. Lanzhou Inst. of Chemical Physics (China). Lab. of Solid Lubrication

Crystalline carbon nitride films have been synthesized in a rf plasma assisted hot filament chemical vapor deposition system. Large crystalline grains up {approximately}10 {micro}m in size as well as film-like regions are observed in the morphology of the films. {beta}-C{sub 3}N{sub 4} with two groups of lattice parameters (one is consistent with the theoretical value and the other is 3% smaller) in the deposited films on polycrystalline Ni substrate has been revealed by x-ray diffraction spectrum (XRD). No Raman shift peaks have been found evidently by Raman scattering measurement, but some presently unknown diffraction peaks appeared in the XRD spectrum. It is proposed that there are possible unknown structures of crystalline C-N in the films. Heteroepitaxial growth of crystalline {beta}-C{sub 3}N{sub 4} has also been tried via a buffer layer of {alpha}-SiC on Si(100) substrate. The XRD pattern of a film show that there are only two main peaks at 2.79 {angstrom} and 1.87 {angstrom} corresponding to the (200) and (300) crystalline planes of the theoretical {beta}-C{sub 3}N{sub 4}. The two main peaks indicate heteroepitaxial growth along the (100) direction of {beta}-C{sub 3}N{sub 4}.

• OSTI ID: 470924
• Report Number(s): CONF-951155--; ISBN 1-55899-313-4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMMONIA
CARBON NITRIDES
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
EXPERIMENTAL DATA
GRAIN SIZE
HYDROGEN
LATTICE PARAMETERS
METHANE
NICKEL
PLASMA
SILICON
SUBSTRATES
THIN FILMS