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Method of deposition of silicon carbide layers on substrates and product

Patent ·
OSTI ID:6158252
; ; ; ;

A method for direct chemical vapor deposition of silicon carbide to substrates, especially nuclear waste particles, is provided by the thermal decomposition of methylsilane at about 800/sup 0/ to 1050/sup 0/ C when the substrates have been confined within a suitable coating environment.

Assignee:
Dept. of Energy
Patent Number(s):
US 4459338
OSTI ID:
6158252
Country of Publication:
United States
Language:
English

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Related Subjects

052001* -- Nuclear Fuels-- Waste Processing
12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE WASTES FROM NUCLEAR FACILITIES
CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
COATINGS
DECOMPOSITION
DEPOSITION
ENCAPSULATION
HIGH-LEVEL RADIOACTIVE WASTES
HYDRIDES
HYDROGEN COMPOUNDS
MANAGEMENT
MATERIALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHASE TRANSFORMATIONS
PROCESSING
PYROLYSIS
RADIOACTIVE MATERIALS
RADIOACTIVE WASTE PROCESSING
RADIOACTIVE WASTES
SILANES
SILICON CARBIDES
SILICON COMPOUNDS
SOLIDIFICATION
SUBSTRATES
SURFACE COATING
THERMOCHEMICAL PROCESSES
WASTE MANAGEMENT
WASTE PROCESSING
WASTES