Deposition method for producing silicon carbide high-temperature semiconductors

Patent · Tue May 12 04:00:00 EDT 1987

OSTI ID:6423339

Hsu, G C; Rohatgi, N K

A deposition method is described for producing silicon carbide high-temperature semiconductors. The method comprises placing at least one semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor comprising bed particles. The fluidized bed comprises SiC, Si particles or mixtures thereof; introducing reactants selected from CH/sub 3/SiCl/sub 3/ or a SiH/sub 4/ /C/sub 3/H/sub 8/ mixture into the reactor; fluidizing by hydrogen gas in a mildly bubbling mode through a gas distributor at the bottom of the reactor; and heating the substrate at temperatures around 1200/sup 0/-1500/sup 0/C thereby causing deposition of a layer of silicon carbide on the semiconductor substrate. A deposition method wherein at least one substrate is heated at a deposition temperature, while the bed particles are unheated is also given.

• Assignee: Dept. of Energy, Washington, DC
• Patent Number(s): US 4664944
• OSTI ID: 6423339
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
ALKANES
BOILING
CARBIDES
CARBON COMPOUNDS
CHEMICAL REACTORS
CHLORIDES
CHLORINE COMPOUNDS
DEPOSITION
DISPERSIONS
ELEMENTS
FLUIDIZATION
FLUIDIZED BEDS
HALIDES
HALOGEN COMPOUNDS
HEATING
HYDRIDES
HYDROCARBONS
HYDROGEN
HYDROGEN COMPOUNDS
MATERIALS
METHANE
MIXTURES
NONMETALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHASE TRANSFORMATIONS
PROPANE
SEMICONDUCTOR MATERIALS
SILANES
SILICON CARBIDES
SILICON CHLORIDES
SILICON COMPOUNDS
SUBSTRATES
VERY HIGH TEMPERATURE