Deposition method for producing silicon carbide high-temperature semiconductors
A deposition method is described for producing silicon carbide high-temperature semiconductors. The method comprises placing at least one semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor comprising bed particles. The fluidized bed comprises SiC, Si particles or mixtures thereof; introducing reactants selected from CH/sub 3/SiCl/sub 3/ or a SiH/sub 4/ /C/sub 3/H/sub 8/ mixture into the reactor; fluidizing by hydrogen gas in a mildly bubbling mode through a gas distributor at the bottom of the reactor; and heating the substrate at temperatures around 1200/sup 0/-1500/sup 0/C thereby causing deposition of a layer of silicon carbide on the semiconductor substrate. A deposition method wherein at least one substrate is heated at a deposition temperature, while the bed particles are unheated is also given.
- Assignee:
- Dept. of Energy, Washington, DC
- Patent Number(s):
- US 4664944
- OSTI ID:
- 6423339
- Resource Relation:
- Patent File Date: Filed date 31 Jan 1986
- Country of Publication:
- United States
- Language:
- English
Similar Records
Deposition of silicon carbide coatings on particles in a fluidized bed using silane and tetramethylsilane: a feasibility study
Chemical vapor deposition of silicon carbide from methylsilane and coating of nuclear waste ceramics
Related Subjects
SILICON CARBIDES
DEPOSITION
BOILING
CHEMICAL REACTORS
FLUIDIZATION
FLUIDIZED BEDS
HEATING
HYDROGEN
METHANE
MIXTURES
PROPANE
SEMICONDUCTOR MATERIALS
SILANES
SILICON CHLORIDES
SUBSTRATES
VERY HIGH TEMPERATURE
ALKANES
CARBIDES
CARBON COMPOUNDS
CHLORIDES
CHLORINE COMPOUNDS
DISPERSIONS
ELEMENTS
HALIDES
HALOGEN COMPOUNDS
HYDRIDES
HYDROCARBONS
HYDROGEN COMPOUNDS
MATERIALS
NONMETALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHASE TRANSFORMATIONS
SILICON COMPOUNDS
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication