Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Deposition method for producing silicon carbide high-temperature semiconductors

Patent ·
OSTI ID:866250
 [1];  [2]
  1. La Crescenta, CA
  2. W. Corine, CA
+ Show Author Affiliations

An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

Assignee:
United States of America as represented by United States (Washington, DC)
Patent Number(s):
US 4664944
OSTI ID:
866250
Country of Publication:
United States
Language:
English

Similar Records

Deposition method for producing silicon carbide high-temperature semiconductors
Patent · Tue May 12 00:00:00 EDT 1987 · OSTI ID:6423339
Methods for producing silicon carbide fibers
Patent · Mon Feb 29 23:00:00 EST 2016 · OSTI ID:1241036
Production of nuclear fuel particles coated with silicon carbide
Patent · Fri Nov 30 23:00:00 EST 1973 · OSTI ID:4428812

Related Subjects

-1500
/117/148/427/
1200
bed
bed particles
bubbling
carbide
carbide high-temperature
composed
comprising
comprising placing
degree
depositing
deposition
deposition method
distributor
fluidized
fluidized bed
fluidizing
gas
gas distributor
heating
high-temperature
hydrogen
hydrogen gas
improved
layer
material
material comprising
method
mildly
mode
particles
placing
producing
producing silicon
reactor
semiconductor
semiconductor material
semiconductor substrate
semiconductors
silicon
silicon carbide
substrate
substrate composed
temperature semiconductor
temperature semiconductors
temperatures