Deposition method for producing silicon carbide high-temperature semiconductors

Patent · Thu Jan 01 00:00:00 EST 1987

OSTI ID:866250

Hsu, George C ^[1]; Rohatgi, Naresh K ^[2]

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1. La Crescenta, CA
2. W. Corine, CA

An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

• DOE Contract Number: NAS7918
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4664944
• OSTI ID: 866250
• Country of Publication: United States
• Language: English

Related Subjects

deposition
method
producing
silicon
carbide
high-temperature
semiconductors
improved
semiconductor
material
comprising
placing
substrate
composed
fluidized
bed
reactor
fluidizing
particles
hydrogen
gas
mildly
bubbling
mode
distributor
heating
temperatures
1200
degree
-1500
depositing
layer
bed particles
deposition method
semiconductor substrate
material comprising
hydrogen gas
fluidized bed
semiconductor material
silicon carbide
producing silicon
comprising placing
gas distributor
temperature semiconductor
substrate composed
temperature semiconductors
carbide high-temperature
/117/148/427/