Thin film heterojunction photovoltaic cells and methods of making the same
Patent
·
OSTI ID:864581
- Los Angeles, CA
A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of Class II B of the Periodic Table of Elements and at least tellurium and then heating said film at a temperature between about 250.degree. C. and 500.degree. C. for a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively, there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The resulting photovoltaic cell exhibits a substantially increased power output over similar cells not subjected to the method of the present invention.
- Assignee:
- Monosolar, Inc. (Santa Monica, CA)
- Patent Number(s):
- US 4388483
- Application Number:
- 06/300,116
- OSTI ID:
- 864581
- Country of Publication:
- United States
- Language:
- English
Similar Records
Thin film heterojunction photovoltaic cells and methods of making the same
Method of making heterojunction p-i-n photovoltaic cell
Thin film photovoltaic diodes and method for making same
Patent
·
Tue Jun 14 00:00:00 EDT 1983
·
OSTI ID:5624397
Method of making heterojunction p-i-n photovoltaic cell
Patent
·
Mon Dec 10 23:00:00 EST 1990
·
OSTI ID:5208347
Thin film photovoltaic diodes and method for making same
Patent
·
Mon Nov 07 23:00:00 EST 1977
·
OSTI ID:7152368
Related Subjects
/136/205/257/438/
250
500
alternatively
cell
cell exhibits
cells
compound
compound form
compound formed
comprises
comprises depositing
convert
converted
degree
deposited
depositing
elements
exhibits
fabricating
film
film heterojunction
film semiconductor
formed
heating
heterojunction
heterojunction photovoltaic
ii
increased
increased power
initially
intrinsic
layer
metal
metal element
metal elements
method
methods
n-type
n-type semiconductor
near
output
p-type
p-type semiconductor
periodic
periodic table
photovoltaic
photovoltaic cell
photovoltaic cells
power
power output
resistivity
resulting
resulting ph
semiconductor
semiconductor compound
semiconductor substrate
similar
similar cell
subjected
substantially
substantially increase
substantially increased
substrate
sufficient
suitably
surface
table
tellurium
temperature
time
time sufficient
type semiconductor
250
500
alternatively
cell
cell exhibits
cells
compound
compound form
compound formed
comprises
comprises depositing
convert
converted
degree
deposited
depositing
elements
exhibits
fabricating
film
film heterojunction
film semiconductor
formed
heating
heterojunction
heterojunction photovoltaic
ii
increased
increased power
initially
intrinsic
layer
metal
metal element
metal elements
method
methods
n-type
n-type semiconductor
near
output
p-type
p-type semiconductor
periodic
periodic table
photovoltaic
photovoltaic cell
photovoltaic cells
power
power output
resistivity
resulting
resulting ph
semiconductor
semiconductor compound
semiconductor substrate
similar
similar cell
subjected
substantially
substantially increase
substantially increased
substrate
sufficient
suitably
surface
table
tellurium
temperature
time
time sufficient
type semiconductor