Method of making heterojunction p-i-n photovoltaic cell
This paper discusses a method of making a heterojunction p-i-n photovoltaic cell having at least three different semiconductor layers, composed together of at least four different elements. It comprises forming an n- type, relatively wide band gap semiconductor layer of a polycrystalline II-IV compound on a substrate; forming on the n-type layer a high resistivity intrinsic semi-conductor layer of a polycrystalline II-VI compound, used as an absorber of light radiation; forming on the intrinsic layer a p-type, relatively wide band gap semiconductor layer of a polycrystalline II-VI compound; the intrinsic layer being in electrically conductive contract on one side with the p-type layer and on an opposite side with the n-type layer; and forming first and second ohmic contacts in electrically conductive contact with the p-type layer and the n-type layer, respectively.
- Assignee:
- Ametek, Inc., Paoli, PA (USA)
- Patent Number(s):
- US 4977097; A
- Application Number:
- PPN: US 7-390986
- OSTI ID:
- 5208347
- Resource Relation:
- Patent File Date: 1 Aug 1989
- Country of Publication:
- United States
- Language:
- English
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Thin film heterojunction photovoltaic cells and methods of making the same
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Related Subjects
36 MATERIALS SCIENCE
SOLAR CELLS
HETEROJUNCTIONS
ELECTRIC CONTACTS
FABRICATION
LAYERS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
DIRECT ENERGY CONVERTERS
ELECTRICAL EQUIPMENT
EQUIPMENT
JUNCTIONS
MATERIALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion
360601 - Other Materials- Preparation & Manufacture