Thin film heterojunction photovoltaic cells and methods of making the same
Patent
·
OSTI ID:5624397
A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of class II B of the periodic table of elements and at least tellurium and then heating said film at a temperature between about 250/sup 0/ C. And 500/sup 0/ C. For a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively, there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The resulting photovoltaic cell exhibits a substantially increased power output over similar cells not subjected to the method of the present invention.
- Assignee:
- Monosolar Inc
- Patent Number(s):
- US 4388483
- OSTI ID:
- 5624397
- Country of Publication:
- United States
- Language:
- English
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