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Title: Thin film heterojunction photovoltaic cells and methods of making the same

Patent ·
OSTI ID:864581

A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of Class II B of the Periodic Table of Elements and at least tellurium and then heating said film at a temperature between about 250.degree. C. and 500.degree. C. for a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively, there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The resulting photovoltaic cell exhibits a substantially increased power output over similar cells not subjected to the method of the present invention.

DOE Contract Number:
XS091521
Assignee:
Monosolar, Inc. (Santa Monica, CA)
Patent Number(s):
US 4388483
Application Number:
06/300,116
OSTI ID:
864581
Country of Publication:
United States
Language:
English