skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Thin film photovoltaic device

Abstract

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

Inventors:
 [1];  [1]
  1. (Wilmington, DE)
Publication Date:
Research Org.:
Solar Energy Research Institute
OSTI Identifier:
864283
Patent Number(s):
US 4342879
Assignee:
University of Delaware (Newark, DE) NREL
DOE Contract Number:  
EG-77-C-01-4042
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
film; photovoltaic; device; solar; cell; utilizes; zinc; phosphide; semiconductor; homojunction; type; comprising; n-type; conductivity; region; forming; electrical; junction; p-type; regions; consisting; essentially; material; formed; treating; extrinsic; dopant; magnesium; multilayer; substrate; opaque; contact; various; transparent; contacts; including; metal; chemical; composition; conductive; oxides; grids; zinc phosphide; n-type dopant; metal film; chemical composition; conductive oxide; consisting essentially; solar cell; semiconductor material; photovoltaic device; film photovoltaic; p-type region; photovoltaic solar; n-type region; metal grids; multilayer substrate; type dopant; type comprising; region forming; metal grid; electrical junction; /136/257/420/438/

Citation Formats

Catalano, Anthony W., and Bhushan, Manjul. Thin film photovoltaic device. United States: N. p., 1982. Web.
Catalano, Anthony W., & Bhushan, Manjul. Thin film photovoltaic device. United States.
Catalano, Anthony W., and Bhushan, Manjul. Fri . "Thin film photovoltaic device". United States. https://www.osti.gov/servlets/purl/864283.
@article{osti_864283,
title = {Thin film photovoltaic device},
author = {Catalano, Anthony W. and Bhushan, Manjul},
abstractNote = {A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {1}
}

Patent:

Save / Share: