Thin film photovoltaic device

Patent · Fri Jan 01 00:00:00 EST 1982

OSTI ID:864283

Catalano, Anthony W ^[1]; Bhushan, Manjul ^[1]

---

1. Wilmington, DE

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

• Research Organization: Solar Energy Research Institute
• DOE Contract Number: EG-77-C-01-4042
• Assignee: University of Delaware (Newark, DE)
• Patent Number(s): US 4342879
• OSTI ID: 864283
• Country of Publication: United States
• Language: English

Related Subjects

film
photovoltaic
device
solar
cell
utilizes
zinc
phosphide
semiconductor
homojunction
type
comprising
n-type
conductivity
region
forming
electrical
junction
p-type
regions
consisting
essentially
material
formed
treating
extrinsic
dopant
magnesium
multilayer
substrate
opaque
contact
various
transparent
contacts
including
metal
chemical
composition
conductive
oxides
grids
zinc phosphide
n-type dopant
metal film
chemical composition
conductive oxide
consisting essentially
solar cell
semiconductor material
photovoltaic device
film photovoltaic
p-type region
photovoltaic solar
n-type region
metal grids
multilayer substrate
type dopant
type comprising
region forming
metal grid
electrical junction
/136/257/420/438/