Method and apparatus for increasing the durability and yield of thin film photovoltaic devices

Patent · 31 December 1986

OSTI ID:866122

Phillips, James E ^[1]; Lasswell, Patrick G ^[1]

---

1. Newark, DE

Thin film photovoltaic cells having a pair of semiconductor layers between an opaque and a transparent electrical contact are manufactured in a method which includes the step of scanning one of the semiconductor layers to determine the location of any possible shorting defect. Upon the detection of such defect, the defect is eliminated to increase the durability and yield of the photovoltaic device.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO
• DOE Contract Number: EG-77-C-01-4042
• Assignee: University of Delaware (Newark, DE)
• Patent Number(s): US 4640002
• OSTI ID: 866122
• Country of Publication: United States
• Language: English

Related Subjects

/438/136/219/324/356/
apparatus
cells
contact
defect
detection
determine
device
devices
durability
electrical
electrical contact
eliminated
film
film photovoltaic
increase
increasing
layers
location
manufactured
method
opaque
pair
photovoltaic
photovoltaic cell
photovoltaic cells
photovoltaic device
photovoltaic devices
scanning
semiconductor
semiconductor layer
semiconductor layers
shorting
step
transparent
transparent electrical
yield