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U.S. Department of Energy
Office of Scientific and Technical Information

Method and apparatus for increasing the durability and yield of thin film photovoltaic devices

Patent ·
OSTI ID:6819264

This patent describes a method of manufacturing thin film photovoltaic cells including the steps of depositing at least first and second thin film semiconductor layers on a substrate and forming electrical contacts to the semiconductor layers. The improvement described here comprises applying a reverse bias voltage between the semiconductor layers, laser scanning the cell to selectively locate localized shorting or shunting defects therein whereby material from one of the cell components on one side of one of the thin film semiconductor layers would thereby contact a cell component on the other side at that semiconductor layer through the defect which would result in a short or shunt, and selectively thermally eliminating the defect to prevent such shorting.

Assignee:
University of Delaware, Newark, DE
Patent Number(s):
US 4640002
OSTI ID:
6819264
Country of Publication:
United States
Language:
English