Method and apparatus for increasing the durability and yield of thin film photovoltaic devices
Patent
·
OSTI ID:7157562
Thin film photovoltaic cells having a pair of semiconductor layers between an opaque and a transparent electrical contact are manufactured in a method which includes the step of scanning one of the semiconductor layers to determine the location of any possible shorting defect. Upon the detection of such defect, the defect is eliminated to increase the durability and yield of the photovoltaic device. 10 figs.
- DOE Contract Number:
- EG-77-C-01-4042
- Assignee:
- Univ. of Delaware, Newark, DE (United States)
- Patent Number(s):
- US 4640002; A
- Application Number:
- PPN: US 6-805435
- OSTI ID:
- 7157562
- Resource Relation:
- Patent File Date: 5 Dec 1985
- Country of Publication:
- United States
- Language:
- English
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