Thin film photovoltaic device

Patent · Tue Aug 03 00:00:00 EDT 1982

OSTI ID:7261723

Catalano, A W; Bhushan, M

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

• DOE Contract Number: EG-77-C-01-4042
• Assignee: Univ. of Delaware, Newark, DE (United States)
• Patent Number(s): A; US 4342879
• Application Number: PPN: US 6-200447
• OSTI ID: 7261723
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
DESIGN
DIRECT ENERGY CONVERTERS
DOPED MATERIALS
EQUIPMENT
FABRICATION
FILMS
MATERIALS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
THIN FILMS
ZINC PHOSPHIDE SOLAR CELLS