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Depth and Thermal Stability of Dry Etch Damage in GaN Schottky Diodes

Journal Article · · Applied Physics Letters
OSTI ID:8483
 [1]; ; ; ; ; ; ; ; ; ;
  1. Sandia National Laboratories
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GaN Schottky diodes were exposed to N2 or H2 Inductively Coupled Plasmas prior to deposition of the rectifying contact. Subsequent annealing, wet photochemical etching or (NH4)2S surface passivation treatments were examined for their effect on diode current- voltage characteristics. We found that either annealing at 750 °C under N2, or removal of ~500-600 Å of the surface essentially restored the initial I-V characteristics. There was no measurable improvement in the plasma-exposed diode behavior with (NH4)2S treatments.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
8483
Report Number(s):
SAND99-1683J; ON: DE00008483
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters
Country of Publication:
United States
Language:
English

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Related Subjects

42 ENGINEERING
Damage
Depth
Etching
Schottky Barrier Diodes
Stability
Temperature Dependence