Depth and thermal stability of dry etch damage in GaN Schottky diodes

Journal Article · Thu Jul 01 00:00:00 EDT 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.124332· OSTI ID:354514

Cao, X A; Cho, H; Pearton, S J ^[1]; Dang, G T; Zhang, A P; Ren, F ^[2]; Shul, R J; Zhang, L ^[3]; Hickman, R; Van Hove, J M ^[4]

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1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
2. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
3. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
4. SVT Associates, Eden Prairie, Minnesota 55344 (United States)

GaN Schottky diodes were exposed to N{sub 2} or H{sub 2} inductively coupled plasmas prior to deposition of the rectifying contact. Subsequent annealing, wet photochemical etching, or (NH{sub 4}){sub 2}S surface passivation treatments were examined for their effect on diode current{endash}voltage (I{endash}V) characteristics. We found that either annealing at 750&hthinsp;{degree}C under N{sub 2}, or removal of {approximately}500{endash}600 {Angstrom} of the surface essentially restored the initial I{endash}V characteristics. There was no measurable improvement in the plasma-exposed diode behavior with (NH{sub 4}){sub 2}S treatments. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 354514
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 75; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ANNEALING
ELECTRIC CONDUCTIVITY
ETCHING
GALLIUM COMPOUNDS
GALLIUM NITRIDES
PASSIVATION
PLASMA
SCHOTTKY BARRIER DIODES