Schottky diode measurements of dry etch damage in n- and p-type GaN
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
n- and p-type GaN was exposed to inductively coupled plasma of N{sub 2}, H{sub 2}, Ar, or Cl{sub 2}/Ar, as a function of source power (0-1000 W) and rf chuck power (20-250 W). For n-GaN, there was a strong reduction in diode reverse breakdown voltage and an increase in forward and reverse currents, while for p-GaN the reverse breakdown voltage increased. These results are consistent with creation of point defects with shallow donor nature that increase the conductivity of initially n-type GaN or decrease the conductivity of p-type GaN. Annealing at 750 degree sign C under N{sub 2} produced significant recovery of the electrical properties, while wet etch removal of 500-600 Aa of the surface produced a full recovery. For completed n-type mesa diodes exposed to Ar or Cl{sub 2}/Ar discharges, the low bias forward currents increased by several orders of magnitude. The exposed surfaces became N{sub 2} deficient in all cases. (c) 2000 American Vacuum Society.
- OSTI ID:
- 20217047
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 4 Vol. 18; ISSN 0734-2101; ISSN JVTAD6
- Country of Publication:
- United States
- Language:
- English
Similar Records
High density plasma damage induced in n-GaN Schottky diodes using Cl{sub 2}/Ar discharges
Cl{sub 2}/Ar high-density-plasma damage in GaN Schottky diodes