Cl{sub 2}/Ar high-density-plasma damage in GaN Schottky diodes
Journal Article
·
· Journal of the Electrochemical Society
- and others
Inductively coupled plasma etching of metallized GaN Schottky diodes in Cl{sub 2}/Ar discharges produces reductions in both reverse breakdown voltage and Schottky barrier height. The extent of these reductions is a function of both ion energy and ion flux. Two different postetch treatments were performed in an attempt to remove the ion-damaged GaN surface layer, namely, annealing in N{sub 2} or UV-ozone oxidation followed by dissolution of the oxide. Both treatments provide only partial restoration of the diode properties.
- Research Organization:
- Univ. of Florida, Gainesville, FL (US)
- Sponsoring Organization:
- Defense Advanced Research Project Agency; Electric Power Research Institute; Office of Naval Research; National Science Foundation; US Department of Energy
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 20023353
- Journal Information:
- Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 2 Vol. 147; ISSN JESOAN; ISSN 0013-4651
- Country of Publication:
- United States
- Language:
- English
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