High density plasma damage induced in n-GaN Schottky diodes using Cl{sub 2}/Ar discharges
Conference
·
OSTI ID:20104629
- and others
The effects of dc chuck self-bias and high density source power (which predominantly control ion energy and ion flux, respectively) on the electrical properties of n-GaN Schottky diodes exposed to Inductively Coupled Plasma of Cl{sub 2}/Ar were examined. Both parameters were found to influence the diode performance, by reducing the reverse breakdown voltage and Schottky barrier height. All plasma conditions were found to produce a nitrogen-deficient surface, with a typical depth of the non-stoichiometry being {approximately}500 {angstrom}. Post-etch annealing was found to partially restore the diode characteristics.
- Research Organization:
- Univ. of Florida, Gainesville, FL (US)
- OSTI ID:
- 20104629
- Country of Publication:
- United States
- Language:
- English
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