Inductively coupled plasma damage in GaN Schottky diodes

Journal Article · Thu Jul 01 04:00:00 EDT 1999 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.590785· OSTI ID:361596

Cao, X A ^[1]; Zhang, A P; Dang, G T ^[2]; Cho, H ^[1]; Ren, F ^[2]; Pearton, S J ^[1]; Shul, R J; Zhang, L ^[3]; Hickman, R; Van Hove, J M ^[4]

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1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
2. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
3. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
4. SVT Associates, Eden Prairie, Minnesota 55344 (United States)

The effects of H{sub 2} or N{sub 2} plasma exposure on the current{endash}voltage characteristics of GaN Schottky diodes were examined as a function of source power and rf chuck power. Under all conditions there was a strong reduction in diode reverse breakdown voltage and an increase in forward and reverse currents. The results are consistent with creation of a thin ({le}600 {Angstrom}) {ital n}-type conducting surface region after ion bombardment of the GaN surface. Much of the degradation in diode quality can be recovered by annealing in N{sub 2} at 750&hthinsp;{degree}C. {copyright} {ital 1999 American Vacuum Society.}

• OSTI ID: 361596
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 17; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ANNEALING
DAMAGE
ETCHING
GALLIUM COMPOUNDS
GALLIUM NITRIDES
ION DENSITY
PLASMA
SCHOTTKY BARRIER DIODES