Electrical effects of plasma damage in p-GaN
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
- Blue Lotus Micro Devices, Eden Prairie, Minnesota 55344 (United States)
The reverse breakdown voltage of p-GaN Schottky diodes was used to measure the electrical effects of high density Ar or H{sub 2} plasma exposure. The near surface of the p-GaN became more compensated through introduction of shallow donor states whose concentration depended on ion flux, ion energy, and ion mass. At high fluxes or energies, the donor concentration exceeded 10{sup 19}&hthinsp;cm{sup {minus}3} and produced {ital p}-to-{ital n} surface conversion. The damage depth was established as {approximately}400 {Angstrom} based on electrical and wet etch rate measurements. Rapid thermal annealing at 900&hthinsp;{degree}C under a N{sub 2} ambient restored the initial electrical properties of the p-GaN. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 692523
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 75; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Plasma damage in p-GaN
Inductively coupled plasma damage in GaN Schottky diodes