Plasma Damage in p-GaN
Journal Article
·
· Journal of Electronic Materials
OSTI ID:8439
- Sandia National Laboratories
The effect of Inductively Coupled Plasma H{sub 2} or Ar discharges on the breakdown voltage of p-GaN diodes was measured over a range of ion energies and fluxes. The main effect of plasma exposure is a decrease in net acceptor concentration to depths of 400-550{angstrom}. At high ion fluxes or energies there can be type conversion of the initially p-GaN surface. Post etch annealing at 900 C restores the initial conductivity.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 8439
- Report Number(s):
- SAND99-1645J
- Journal Information:
- Journal of Electronic Materials, Journal Name: Journal of Electronic Materials
- Country of Publication:
- United States
- Language:
- English
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