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Ta-based advancing interface ohmic contacts to AlGaN/GaN heterostructures

Journal Article · Thu Jan 31 23:00:00 EST 2002 · Journal of Applied Physics

OSTI ID:842032

Qian, D ^[1]; Jia, L; Yu, S; Asbeck, P M; Lau, S S; Lim, S -H; Liliental-Weber, Z; Haynes, T E; Barner, J

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Research Organization:: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)

Sponsoring Organization:: US Department of Energy (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 842032

Report Number(s):: LBNL--49560

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 89; ISSN JAPIAU; ISSN 0021-8979

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
ELECTRIC CONTACTS
GALLIUM NITRIDES
INTERFACES
TANTALUM