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Transport Properties of the Advancing Interface Ohmic Contact to AlGaN/GaN Heterostructures

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.1447591· OSTI ID:829191

No abstract prepared.

Research Organization:
ORNL Oak Ridge National Laboratory
Sponsoring Organization:
DOE
DOE Contract Number:
AC05-00OR22725
OSTI ID:
829191
Report Number(s):
P01-111602
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 80; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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