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Ta-based Advancing Interface Ohmic Contacts to AlGaN/GaN Heterostructures

Journal Article · Tue May 01 00:00:00 EDT 2001 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1365431· OSTI ID:829469

Qiao, D ^[1]

ORNL

No abstract prepared.

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Research Organization:: ORNL Oak Ridge National Laboratory

Sponsoring Organization:: DOE

DOE Contract Number:: AC05-00OR22725

OSTI ID:: 829469

Report Number(s):: P01-109697

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 89; ISSN JAPIAU; ISSN 0021-8979

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
ELECTRIC CONTACTS
GALLIUM NITRIDES
HETEROJUNCTIONS
INTERFACES
TANTALUM