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Ta-based interface ohmic contacts to AlGaN/GaN heterostructures

Journal Article · Tue Jan 09 23:00:00 EST 2001 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1365431· OSTI ID:828127

Qiao, D ^[1]; Jia, L; Yu, L S; Asbeck, P M; Lau, S S; Lim, S -H; Liliental-Weber, Z; Haynes, T E; Barner, J B

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Research Organization:: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)

Sponsoring Organization:: USDOE. Office of Science with UT-Battelle, LLC Contract DE-AC05-00OR22725; Department of Defense.Ballistic Missile Defense Technology Contract W31RPD-9-A9604. US Army Space and Strategic Defense Command, Office of the Secretary of Defense. Office of Naval Research POLARIS MURI; University of California, San Diego (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 828127

Report Number(s):: LBNL--48507

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 89; ISSN JAPIAU; ISSN 0021-8979

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
ELECTRIC CONTACTS
GALLIUM NITRIDES
HETEROJUNCTIONS
INTERFACES
TANTALUM