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Quantification of Excess Vacancy Defects from High-Energy Ion Implantation in Si by Au Labeling

Journal Article · Sat Jan 01 04:00:00 EST 2000 · Appl. Phys. Lett.

DOI:https://doi.org/10.1063/1.126653· OSTI ID:829432

Kalyanaraman, R ^[1]

ORNL

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Research Organization:: ORNL Oak Ridge National Laboratory

Sponsoring Organization:: DOE

DOE Contract Number:: AC05-00OR22725

OSTI ID:: 829432

Report Number(s):: P00-107105

Journal Information:: Appl. Phys. Lett., Journal Name: Appl. Phys. Lett. Journal Issue: 23 Vol. 76; ISSN 0003-6951

Country of Publication:: United States

Language:: English

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