Quantification of excess vacancy defects from high-energy ion implantation in Si by Au labeling

Journal Article · Mon Jun 05 04:00:00 EDT 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.126653· OSTI ID:20216505

Kalyanaraman, R ^[1]; Haynes, T E ^[1]; Venezia, V C ^[2]; Jacobson, D C ^[2]; Gossmann, H -J ^[2]; Rafferty, C S ^[2]

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1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
2. Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)

It has been shown recently that Au labeling [V. C. Venezia, D. J. Eaglesham, T. E. Haynes, A. Agarwal, D. C. Jacobson, H.-J. Gossmann, and F. H. Baumann, Appl. Phys. Lett. 73, 2980 (1998)] can be used to profile vacancy-type defects located near half the projected range ((1/2) R{sub p}) in MeV-implanted Si. In this letter, we have determined the ratio of vacancies annihilated to Au atoms trapped (calibration factor ''k'') for the Au-labeling technique. The calibration experiment consisted of three steps: (1) a 2 MeV Si{sup +} implant into Si(100) followed by annealing at 815 degree sign C to form stable excess vacancy defects; (2) controlled injection of interstitials in the (1/2) R{sub p} region of the above implant via 600 keV Si{sup +} ions followed by annealing to dissolve the {l_brace}311{r_brace} defects; and (3) Au labeling. The reduction in Au concentration in the near-surface region (0.1-1.6 {mu}m) with increasing interstitial injection provides the most direct evidence so far that Au labeling detects the vacancy-type defects. By correlating this reduction in Au with the known number of interstitials injected, it was determined that k=1.2{+-}0.2 vacancies per trapped Au atom. (c) 2000 American Institute of Physics.

• OSTI ID: 20216505
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 76; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CALIBRATION
CRYSTAL DEFECTS
EXPERIMENTAL DATA
GOLD
INTERSTITIALS
ION IMPLANTATION
MEV RANGE 01-10
SILICON
VACANCIES