Vacancy supersaturations produced by high-energy ion implantation

Technical Report · Thu Jan 01 04:00:00 EST 1998

DOI:https://doi.org/10.2172/645530· OSTI ID:645530

Venezia, V C; Eaglesham, D J; Jacobson, D C; Gossmann, H J ^[1]; Haynes, T E ^[2]; Agarwal, A ^[1]; Friessnegg, T; Nielsen, B ^[3]

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1. Lucent Technologies, Murray Hill, NJ (United States). Bell Labs.
2. Oak Ridge National Lab., TN (United States). Solid State Div.
3. Brookhaven National Lab., Upton, NY (United States)

A new technique for detecting the vacancy clusters produced by high-energy ion implantation into silicon is proposed and tested. This technique takes advantage of the fact that metal impurities, such as Au, are gettered near one-half of the projected range ({1/2}R{sub p}) of MeV implants. The vacancy clustered region produced by a 2 MeV Si{sup +} implant into silicon has been labeled with Au diffused in from the front surface. The trapped Au was detected by Rutherford backscattering spectrometry (RBS) to profile the vacancy clusters. Cross section transmission electron microscopy (XTEM) analysis shows that the Au in the region of vacancy clusters is in the form of precipitates. By annealing MeV implanted samples prior to introduction of the Au, changes in the defect concentration within the vacancy clustered region were monitored as a function of annealing conditions.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE Office of Energy Research, Washington, DC (United States)
• DOE Contract Number: AC05-96OR22464
• OSTI ID: 645530
• Report Number(s): ORNL/CP--96088; CONF-980528--; ON: DE98004112
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
EXPERIMENTAL DATA
GETTERING
GOLD
ION IMPLANTATION
PHYSICAL RADIATION EFFECTS
SILICON
SILICON IONS
SUPERSATURATION
VACANCIES